Faculty profile
Douglas Barlage
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Latest papers
Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current.
Nature communications · 2016 · senior author
Latest funding
- $100,000
Multi-layer I/O chip architecture enabled by back end of line compatible switch for increased data handling density
NSERC · 2020 · Principal investigator
- $150,000
Operations and Maintenance Support - Supporting Advanced Research in Engineering and Science (s-ARIES)
NSERC · 2017 · Co-investigator
- $125,000
Wide Band Gap Semiconductors for Flexible Power Applications
NSERC · 2015 · Principal investigator
1 publications.
Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current.
Shoute G, Afshar A, Muneshwar T, Cadien K, Barlage D
Multi-layer I/O chip architecture enabled by back end of line compatible switch for increased data handling density
Principal investigators: Barlage, Douglas
Operations and Maintenance Support - Supporting Advanced Research in Engineering and Science (s-ARIES)
Principal investigators: Tsui, Ying
Wide Band Gap Semiconductors for Flexible Power Applications
Principal investigators: Barlage, Douglas
Indium free zinc oxide thin film transistors for emerging applications
Principal investigators: Barlage, Douglas
Nano-scaled interface and material control for III-N electronics
Principal investigators: Barlage, Douglas
From CIHR, NSERC and SSHRC funding decisions: CIHR since 2008, NSERC since 1991 and SSHRC since 1998, including their latest published competition results.
Frequent collaborators
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