Faculty profile
Pouya Valizadeh
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Research
Latest funding
- $168,000
Experimental and theoretical investigation of geometric and compositional factors in improving the off-state breakdown voltage, reliability, and enhancement-mode operation among GaN channel hetero-structure field effect transistors
NSERC · 2020 · Principal investigator
- $150,000
Equipment for Developing Boron Nitride for Deep Ultraviolet Photonics, Solar Fuels, and Solid State Lighting
NSERC · 2016 · Co-investigator
- $110,000
Investigation of the role of isolation-feature geometry in improving the threshold-voltage adjustability and power-handling of polar III-Nitride HFETs, and physics-based modeling of the gate-current
NSERC · 2015 · Principal investigator
Experimental and theoretical investigation of geometric and compositional factors in improving the off-state breakdown voltage, reliability, and enhancement-mode operation among GaN channel hetero-structure field effect transistors
Principal investigators: Valizadeh, Pouya
Keywords: compound semiconductors; iii-nitride semiconductors; hfet; enhancement-mode fet; lattice-matching; breakdown voltage; long-term reliability; strain engineering; high frequency performance; power handling
Equipment for Developing Boron Nitride for Deep Ultraviolet Photonics, Solar Fuels, and Solid State Lighting
Principal investigators: Mi, Zetian
Investigation of the role of isolation-feature geometry in improving the threshold-voltage adjustability and power-handling of polar III-Nitride HFETs, and physics-based modeling of the gate-current
Principal investigators: Valizadeh, Pouya
Equipment for Developing Low-Dimensional Semiconductor Nanostructures for Deep Ultraviolet Optoelectronics, Solid State Lighting, and Solar Fuels
Principal investigators: Mi, Zetian
Electron beam deposition system for multi-user nanofabrication facility
Principal investigators: Kirk, Andrew
Investigation of strain-engineering techniques for modification of the characteristics of FETs in polar III-nitride material system and analytical modeling of device peculiarities
Principal investigators: Valizadeh, Pouya
From CIHR, NSERC and SSHRC funding decisions: CIHR since 2008, NSERC since 1991 and SSHRC since 1998, including their latest published competition results.
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