Faculty profile
Hassan Maher
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Research
Latest papers
Micro-Raman Scattering Analysis of Temperature-Dependent Electron Mobility and Fermi Level in n-Doped Homoepitaxial GaN Layers for Power Electronics.
ACS applied materials & interfaces · 2026
A Novel Isolation Approach for GaN-Based Power Integrated Devices.
Micromachines · 2024 · senior author
Impact of III-Nitride/Si Interface Preconditioning on Breakdown Voltage in GaN-on-Silicon HEMT.
Micromachines · 2021
Latest funding
- $149,426
Cryogenics for semiconductor quantum photon emitters characterizations for quantum applications
NSERC · 2025 · Co-investigator
- $25,000
Technologie GaN-HEMT pour les applications quantiques
NSERC · 2024 · Principal investigator
- $149,482
Integrated photon autocorrelation and micro-photoluminescence spectroscopy for developing solid-state quantum light emitters for quantum applications
NSERC · 2023 · Co-investigator
3 publications.
Micro-Raman Scattering Analysis of Temperature-Dependent Electron Mobility and Fermi Level in n-Doped Homoepitaxial GaN Layers for Power Electronics.
Ezza A, Machon D, Sonneville C, Frayssinet E, Cordier Y, Planson D, Maher H, Soltani A
A Novel Isolation Approach for GaN-Based Power Integrated Devices.
Zaidan Z, Al Taradeh N, Benjelloun M, Rodriguez C, Soltani A, Tasselli J, Isoird K, Phung LV, Sonneville C, Planson D, Cordier Y, Morancho F, Maher H
Impact of III-Nitride/Si Interface Preconditioning on Breakdown Voltage in GaN-on-Silicon HEMT.
Khediri A, Talbi A, Jaouad A, Maher H, Soltani A
Cryogenics for semiconductor quantum photon emitters characterizations for quantum applications
Principal investigators: Sadaf, Sharif
Keywords: quantum emtters; photoluminescence; quantum sensing; cryogenic; auto-correlation; semiconductors; nanotechnology; quantum dots; quantum science; quantum photonics
Technologie GaN-HEMT pour les applications quantiques
Principal investigators: Maher, Hassan H
Keywords: circuit intégré; fabrication en salle blanche; gan; hemt; temperature cryogeniques
Integrated photon autocorrelation and micro-photoluminescence spectroscopy for developing solid-state quantum light emitters for quantum applications
Principal investigators: Sadaf, Sharif
Laser et phototransducteurs pour le transfert de puissance
Principal investigators: Hamon, Gwenaelle GEVE
Keywords: fabrication; gaas; iii-v; laser; laser power converter; phototransducers; phototransducteurs; transfert d'énergie
Intégration monolithique de fonctions dédiées à la puissance sur technologie à base de nitrure de Gallium
Principal investigators: Maher, Hassan HM
Keywords: Convertisseur de tension; GaN; High Electron Mobility Transistor; Semiconducteur
Site-selective fabrication of quantum nanostructures
Principal investigators: Maher, Hassan H
Nouvelles filière de composants GaN
Principal investigators: Maher, Hassan
Keywords: nitrure de gallium; matériaux iii-v; microélectronique; transistor de puissance; hemt; mosfet; circuit intégré
Advanced back end processing for high breakdown voltage and low thermal resistance GaN power transistor
Principal investigators: Maher, Hassan
Nouveaux composants à base de GaN (Nitrure de Gallium).
Principal investigators: Maher, Hassan
GaN technology used for the fabrication of stable and high efficiency rectifier
Principal investigators: Maher, Hassan
From CIHR, NSERC and SSHRC funding decisions: CIHR since 2008, NSERC since 1991 and SSHRC since 1998, including their latest published competition results.
Frequent collaborators
- Hassan Maher and Ali SOLTANI: 3 shared papers
- Hassan Maher and Abdelatif Jaouad: 1 shared paper
- Hassan Maher and Denis Machon: 1 shared paper
- Ali SOLTANI and Abdelatif Jaouad: 1 shared paper
- Ali SOLTANI and Denis Machon: 1 shared paper
- Abdelatif Jaouad and Denis Machon: 1 shared paper
- Génie électrique et génie informatique
- Génie, Faculté de
Co-authors at Université de Sherbrooke, colored by department. Thicker lines mean more shared papers; select anyone to open their profile and their own map.
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